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The Helios 1200 Full Wafer DualBeam system has the ability to analyze full wafers up to 300 mm which improves the efficiency of semiconductor and data storage failure analysis and manufacturing support labs that need to deliver accurate data quickly to the production floor. This also eliminates the time required to re-establish the navigational coordinate system when working with wafer pieces. The system provides productivity for failure analysis, process development and process control requirements. The ability to introduce full wafers directly into the system allows users to navigate directly to multiple features of interest based on design data or information from other inspection and defect detection tools. Fast switching between imaging and milling permits precise, efficient control of the cross sectioning process. The system combines scanning electron microscope (SEM) image resolution and extremely fast switching between imaging and ion beam milling to deliver rapid, reliable, efficient cross-sectional analysis of structures and defects. When the analysis demands the higher resolution capability of a dedicated scanning transmission electron microscope (S/TEM), proprietary Multiloader technology enables fast and secure sample transfer. Proprietary automation software product, iFAST, improves the quality and consistency of multiple, site-specific samples in a single session at a cost-per-sample that is competitive with conventional SEM bulk sample preparations. Optional energy dispersive X-ray spectrometry (EDS) on thin samples offers compositional analysis with very good spatial resolution. The optional OmniProbe micromanipulator allows in situ extraction of prepared TEM lamella. The OmniProbe 300’s in-chamber needle exchange process eliminates the need to break chamber vacuum to obtain a new probe.
Tim Studt Editor in Chief