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Hi-Res SEM Series Delivers Superior Imaging

April 26, 2010

Opening new vistas of imaging possibilities – image of pollen shows 50V SEM performance (10,000x magnification) using Helios x50 NanoLab DualBeam system with extreme high-resolution scanning electron microscope (XHR SEM) and new, high-performance focused ion beam (FIB).
Opening new vistas of imaging possibilities – image of pollen shows 50V SEM performance (10,000x magnification) using Helios x50 NanoLab DualBeam system with extreme high-resolution scanning electron microscope (XHR SEM) and new, high-performance focused ion beam (FIB).
FEI Company today introduced the new Helios NanoLab x50 DualBeam Series, a powerful and versatile DualBeam system. It integrates FEI’s extreme high-resolution scanning electron microscope (XHR SEM) with a new, high-performance focused ion beam (FIB), to deliver a superior level of imaging and milling capability for leading-edge applications in semiconductor and materials science research and development.

The new high-performance Tomahawk FIB, originally introduced in the V400ACETM and now empowered with FEI’s latest fast switching technology, provides SEM and FIB live monitoring of milling operations, a smaller FIB spot for more precise milling control, as well as higher beam currents for faster material removal on large structures, such as through silicon vias (TSVs). Overall throughput of advanced TEM lamella preparation has been improved by 40 percent.

The Helios 450(S) series is designed primarily for today’s advanced semiconductor labs that are dealing with numerous challenges, including shrinking dimensions at sub 32nm nodes, advanced packaging techniques such as TSVs and multi-die stacks, as well as a higher volume of samples requiring TEM imaging.

The Helios 650 is suitable for academic and industrial research centers that need to do advanced material characterization and modification down to the single nanometer scale. It delivers a wider range of information and higher quality 3-D data in order to better understand material characteristics, such as particle/porosity distribution, crack propagation and other behaviors. The sub-nanometer resolution of the Helios 650 at extremely low beam energies provides surface-specific imaging that, until now, was unavailable in a dual beam instrument. For nanoprototyping, the Helios 650 offers users the ability to create finer, more complex structures over large areas (millimeters in size) with better control over dimensions, fewer artifacts, faster material removal rates, and more.

FEI Company
Bld. AAE, Achtseweg-Noord 5
5651GG EindhovenPhone: +31 40 2766225
Fax: +31 40 2766587
http://www.feicompany.com

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Editor's Corner

michelle
Michelle Longo
Asst. Managing Editor

Striving Toward Secondary Goals
Late last month, Republican presidential candidate Newt Gingrich stunned most everyone when he declared his promise that "by the end of my second term, we will have the first permanent base on the moon." While I don’t fault Gingrich for dreaming and trying to set high standards and goals, I can’t help but think of the enormous amount of known and unknown variables that significantly deter this accomplishment...continue

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